P375 – 4″X8″ HV Ion beam etching HZB
Application
HV ion beam etching system for surface structuring of max. 4″ x 8″ substrates
Year of delivery
2013
Installation site
HZB, Berlin, Germany
Design Features
- HV ion beam etching system with fine focus ion beam source.
- Fully motorized 2 axes sample manipulator (x, y sample stage).
- Lamp heating to about 150°C at the sample.
Special Features
- Different sample sizes from 2″ wafer up to 4″ x 8″ samples can be handled.
- Freely programmable sample motion in x-y plane (incl. speed profiles).
Outer Dimensions
Technical specifications and performance values
General
Etching chamber
Size
About 620 mm width, about 1000 mm depth, about 420 mm height (D-shape chamber with door)
Material
stainless steel
Vacuum
Sputtering chamber
Base pressure
< 5 *10-8 mbar
Pump down time
3 hours to < 5 * 10-7 mbar
Chamber pumping
Turbo pumping stage, chamber lid differentially pumped by dry foreline pump
Manipulator features
Sputtering chamber
Sample size
diameter max. 4″ x 8″ substrate
Motion axes
2 motorized axes (x tranlsation & y translation)
Temperatures
Room temperature up to 150°C at sample (not stabilized)
Special features
Freely programmable sample motion in x-y plane (incl. speed profiles)
Performance test results
Chamber pump down
Long time sample heating
