P467 – 3″ UHV sputter deposition HZDR
Application
UHV sputter deposition system for thin film and multilayer deposition at 3″ substrates
Year of delivery
2019
Installation site
HZDR, Dresden-Rossendorf, Germany
Design Features
- UHV magnetron sputter deposition system with combination of confocal and face to face sputter up configurations.
- Up to six 2″ magnetrons in confocal configuration and up to four 3″ magnetrons in face to face configuration.
- 2″ magnetrons with manual in situ tilting.
- All magnetrons with easy changeable magnetic system for use with ferromagentic or non-ferromagnetic target materials.
- Low pressure and low power sputtering possible.
- Fully motorized 3 axes sample manipulator with integrated motorized wedge shutter and maximal sample temperature well above 800°C.
- Ion source for sample precleaning and mild etching.
- Process gas analysis system incl. residual gas analysis installed at the sputtering chamber.
- Integrated bake out system.
- Load lock chamber with storage and lamp heating option.
Special Features
- Upto three 2″ magnetrons can be used in face to face configuration too.
- Very small sample to target distance possible (less than 20mm for 3″ magnetrons).
- Process gas analysis system with 2 pin holes for optimized function in a wide presssure range (from base pressure up to 5 * 10-2 mbar).
- System is prepared to be added to a cluster tool via second transfer port at sputtering chamber.
- Handling of samples with inplane as well as out of plane magnet assamblies is possible.
- Different sample sizes from 4″ wafer down to 10mm x 10mm samples can be handled (using different kind of sample adapters).
Outer Dimensions
Technical specifications and performance values
General
Sputtering chamber
Size
1000 mm diameter, about 800 mm height
Material
stainless steel
Load lock chamber
Size
200 mm diameter, about 400 mm height
Material
stainless steel
Vacuum
Sputtering chamber
Base pressure
< 2 *10-8 mbar
Pump down time
6 hours to < 10-7 mbar
Chamber pumping
Turbo pumping stage, chamber lid differentially pumped by dry foreline pump
Bake out
< 150°C
Load lock chamber
Base pressure
< 10-7 mbar
Pump down time
2.5 hours to < 10-7 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Manipulator features
Sputtering chamber
Sample size
diameter max. 3″ substrate
Motion axes
3 motorized axes (manipulator arm rotation, z tranlsation and (continous) sample stage rotation)
Motorized wedge shutter (part of the manipulator head) with a motion speed of min. 44µm/s and max. about 7mm/s, incl. speed profile feature
Temperatures
Room temperature (not stabilized) up to 1000°C at sample (short time heating) / > 850°C at sample (long time heating)
Special features
Use of samples with inplane as well as out of plane magnet assamblies is possible
Load lock chamber
(Sample storage)
Storage size
8 sample holders
Sample size
diameter max. 3″ substrate
Motion axes
2 manual axes (rotation, z tranlsation)
Rotation axis equipped with an air side idexer plate for easy and fast sample loading via access door or transfer rod
Sample preparation features
Sputtering chamber
Plasma treatment
Up to 5 * 10-4 mbar partly ionised argon gas (using a griddless ion gun)
Ion beam etching /
sample precleaning
Wide range variation of ion source to sample distance
Wide range variation of ion energy and ion beam current
Performance test results
Chamber pump down
Long time sample heating
Deposition uniformity (face to face sputtering)
Deposition uniformity (confocal sputtering)
RGA & low pressure process gas analysis
Process gas analysis (middle & high pressure)
